Preparations of ITO Thin Films by Low Temperature and Low Damage Process

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Growth and Characterization of Thin MoS2 Films by Low- Temperature Chemical Bath Deposition Method

Transition metal dichalcogenide (TMDC) materials are very important inelectronic and optical integrated circuits and their growth is of great importance in thisfield. In this paper we present growth and fabrication of MoS2 (Molibdan DiSulfide)thin films by chemical bath method (CBD). The CBD method of growth makes itpossible to simply grow large area scale of the thin la...

متن کامل

Study of Photo-Conductivity in MoS2 Thin Films Grown in Low-Temperature Aqueous Solution Bath

An experimental study over the optical response of thin MoS2 films grownby chemical bath deposition (CBD) method is presented. As two important factors, theeffect of bath temperature and growth time are considered on the photocurrentgeneration in the grown samples. The results show that increasing the growth time leadsto better optical response and higher difference betw...

متن کامل

Effect of growth time on ZnO thin films prepared by low temperature chemical bath deposition on PS substrate

ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...

متن کامل

Low temperature synthesis and properties of lithium niobate thin films

Thin flhns of lithium niobate were deposited on silicon ( 100) by a sol-gel technique and were annealed in oxygen at 400 “C. The annealed films were characterized by x-ray diffraction and transmission electron microscopy which showed crystallization to LiNbO,, a preferred orientation of the films, and an average grain size of about 0.5 ym. Electrical characterization of the films in the metal-f...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: SHINKU

سال: 2004

ISSN: 0559-8516,1880-9413

DOI: 10.3131/jvsj.47.187